 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS IXFK 27N80 IXFK 25N80 IXFN 27N80 IXFN 25N80 800 V 800 V 800 V 800 V ID25 27 A 25 A 27 A 25 A RDS(on) 0.30 W 0.35 W 0.30 W 0.35 W Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight Symbol Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C, Chip capability TC = 25C, pulse width limited by TJM TC = 25C 27N80 25N80 27N80 25N80 27N80 25N80 Maximum Ratings IXFK IXFN 800 800 20 30 27 25 108 100 14 13 30 5 500 800 800 20 30 27 25 108 100 14 13 30 5 520 150 -55 ... +150 V V V V A A A A A A mJ V/ns W C C C C V~ V~ TO-264 AA (IXFK) G D S (TAB) miniBLOC, SOT-227 B (IXFN) E153432 S D G G TC= 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C S S S D G = Gate S = Source D = Drain TAB = Drain -55 ... +150 Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features * * * * * * 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s 300 0.9/6 10 2500 3000 Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 800 0.096 2 -0.214 200 TJ = 25C TJ = 125C 25N80 27N80 500 2 0.35 0.30 4.5 V %/K V %/K nA mA mA W W * * International standard packages JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification miniBLOC, with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier VDSS VGH(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDSS temperature coefficient VDS = VGS, ID = 8 mA VGS(th) temperature coefficient VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 ms, duty cycle d 2 % Applications * * * * * DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls Advantages * * * Easy to mount Space savings High power density 95561C (3/98) IXYS reserves the right to change limits, test conditions, and dimensions. (c) 2000 IXYS All rights reserved 1-4 IXFK 25N80 IXFN 25N80 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 16 7930 VGS = 0 V, VDS = 25 V, f = 1 MHz 630 146 28 8400 9740 712 192 30 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 W (External), 80 75 40 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 TO-264 AA TO-264 AA miniBLOC, SOT-227 B miniBLOC, SOT-227 B 0.05 0.15 0.24 320 38 120 350 46 130 400 56 142 0.25 790 240 S pF pF pF ns ns ns ns nC nC nC K/W K/W K/W K/W A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Dim. IXFK 27N80 IXFN 27N80 TO-264 AA Outline gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK RthJC RthCK VDS = 10 V; ID = 0.5 * ID25, pulse test Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 27N80 25N80 27N80 25N80 27 25 108 100 1.5 250 400 2 17 A A A A V ns ns mC A miniBLOC, SOT-227 B IF = 100 A, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IS, -di/dt = 100 A/ms, VR = 100 V T J =25C TJ =125C T J =25C M4 screws (4x) supplied Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFK 25N80 IXFN 25N80 40 TJ = 25 C O IXFK 27N80 IXFN 27N80 40 VGS = 9V 8V 7V 6V TJ = 125OC VGS = 9V 8V 7V 6V 30 30 ID - Amperes ID - Amperes 5V 5V 20 20 10 4V 10 4V 0 0 0 2 4 6 8 10 0 4 8 12 16 20 VDS - Volts VDS - Volts Figure 1. Output Characteristics at 25OC 2.6 2.4 VGS = 10V Figure 2. Output Characteristics at 125OC 2.6 2.4 VGS = 10V RDS(ON) - Normalized RDS(ON) - Normalized 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 10 TJ = 125OC 2.2 2.0 1.8 1.6 1.4 1.2 ID = 13.5A ID = 27A TJ = 25OC 20 30 40 50 1.0 25 50 75 100 125 150 ID - Amperes TJ - Degrees C Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID 30 25 IXF_25N80 IXFN27N80 Figure 4. RDS(on) normalized to 0.5 ID25 value vs. TJ 30 25 ID - Amperes IXFK27N80 15 10 5 0 -50 ID - Amperes 20 20 15 10 5 TJ = 125oC TJ = 25oC -25 0 25 50 75 100 125 150 0 2 3 4 5 6 7 TC - Degrees C VGS - Volts Figure 5. Drain Current vs. Case Temperature Figure 6. Admittance Curves (c) 2000 IXYS All rights reserved 3-4 IXFK 25N80 IXFN 25N80 12 10 VDS = 400V Vds=300V ID=30A = 27A = 1mA IG=10mA IXFK 27N80 IXFN 27N80 10000 Ciss VGS - Volts 8 6 4 2 0 Capacitance - pF f = 1MHz Coss 1000 Crss 0 100 200 300 400 500 100 0 5 10 15 20 25 30 35 40 Gate Charge - nC VDS - Volts Figure 7. Gate Charge 100 Figure 8. Capacitance Curves 80 ID - Amperes 60 TJ = 125OC 40 20 TJ = 25OC 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Volts Figure 9. Forward Voltage Drop of the Intrinsic Diode 1 D=0.5 R(th)JC - K/W 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single pulse D = Duty Cycle 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds Figure 10. Transient Thermal Resistance (c) 2000 IXYS All rights reserved 4-4 |
Price & Availability of IXFN25N80
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |